A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless signals). The device can amplify
analog or digital signals. It can also switch DC or
function as an oscillator.
In the FET, current flows along a semiconductor path called the
channel. At one end of the channel, there is an electrode called the
source. At the other end of the channel, there is an electrode called
the drain. The physical diameter of the channel is fixed, but its
effective electrical diameter can be varied by the application of a voltage to a
control electrode called the gate. The conductivity of the FET
depends, at any given instant in time, on the electrical diameter of the
channel. A small change in gate voltage can cause a large variation in the
current from the source to the drain. This is how the FET amplifies
signals.
Field-effect transistors exist in two major classifications. These are known as the junction FET (JFET) and the metal-oxide-
semiconductor FET (MOSFET).
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