The PIN diode, p-i-n diode is essentially a refinement of the ordinary PN junction diode. Its development arose from the original PN diode development activities and applications for the new diode were soon found.
The PIN diode differs from the basic PN junction diode in that the PIN diode includes a layer of intrinsic material between the P and N layers. As a result of the intrinsic layer, PIN diodes have a high breakdown voltage and they also exhibit a low level of junction capacitance. In addition to this the larger deletion region of the PIN diode is ideal for applications as a photodiode.
Although the PIN diode saw some initial applications as power rectifiers it was later realised that the lower junction capacitance could be utilised in microwave applications. In 1958 some of the first microwave devices were developed, and later during the 1960s they gained more widespread acceptance in this role.
With the introduction of semiconductors as photo devices the PIN diode saw its use increase as a photodetector. Its large depletion area was ideal for its use in this role.
The PIN diode differs from the basic PN junction diode in that the PIN diode includes a layer of intrinsic material between the P and N layers. As a result of the intrinsic layer, PIN diodes have a high breakdown voltage and they also exhibit a low level of junction capacitance. In addition to this the larger deletion region of the PIN diode is ideal for applications as a photodiode.
PIN diode development
After the PN junction was understood and further developed in the 1940s, other research into variants of the basic PN junction was undertaken. The first references to this was a low frequency high power rectifier that was developed in 1952 by Hall , and some later developments undertaken by Prince in 1956.Although the PIN diode saw some initial applications as power rectifiers it was later realised that the lower junction capacitance could be utilised in microwave applications. In 1958 some of the first microwave devices were developed, and later during the 1960s they gained more widespread acceptance in this role.
With the introduction of semiconductors as photo devices the PIN diode saw its use increase as a photodetector. Its large depletion area was ideal for its use in this role.
For more details : PIN Diode
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